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HSD16M32F4V-10L 参数 Datasheet PDF下载

HSD16M32F4V-10L图片预览
型号: HSD16M32F4V-10L
PDF下载: 下载PDF文件 查看货源
内容描述: 基于16Mx8 , 4Banks , 4K参考同步DRAM模块64Mbyte ( 16M ×32位) SMM 。 , 3.3V [Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 103 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HSD16M32F4V/VA
+3.3V
V
tt
=1.4V
1200Ω
D
OUT
870Ω
50pF*
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
(Fig. 1) DC output load
circuit
D
OUT
Z0=50Ω
50Ω
50pF
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
VERSION
PARAMETER
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
CAS latency=2
-
1
SYMBOL
-13
t
RRD
(min)
t
RP
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
tRC
(min)
UNIT
-12
16
20
20
48
100
65
68
2
2 CLK + 20 ns
1
1
1
2
ea
CLK
CLK
CLK
70
70
-10
20
20
20
50
-10L
20
20
20
50
ns
ns
ns
ns
ns
ns
CLK
15
20
20
45
NOTE
1
1
1
1
1
2.5
t
RDL
(min)
t
DAL
(min)
t
CDL
(min)
t
BDL
(min)
t
CCD
(min)
CAS latency=3
2
2
3
4
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
.
URL: www.hbe.co.kr
REV 1.0 (August.2002).
6
HANBit Electronics Co.,Ltd