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HSD16M32M4V-13 参数 Datasheet PDF下载

HSD16M32M4V-13图片预览
型号: HSD16M32M4V-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 16M ×32位), 72引脚SIMM基于16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 存储动态存储器
文件页数/大小: 10 页 / 106 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HSD16M32M4V
+3.3V
V
tt
=1.4V
1200Ω
D
OUT
870Ω
50pF*
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
(Fig. 1) DC output load
circuit
(Fig. 2) AC output load circuit
D
OUT
Z0=50Ω
50pF
50Ω
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
VERSION
PARAMETER
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
CAS latency=2
-
1
SYMBOL
-A
t
RRD
(min)
t
RP
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
tRC
(min)
UNIT
-8
16
20
20
48
-H
20
20
20
50
100
65
68
70
2
2 CLK + 20 ns
1
1
1
2
ea
70
80
-L
20
20
20
50
-10
20
24
24
50
ns
ns
ns
ns
ns
ns
CLK
-
CLK
CLK
CLK
15
20
20
45
NOTE
1
1
1
1
1
2.5
5
2
2
3
4
t
RDL
(min)
t
DAL
(min)
t
CDL
(min)
t
BDL
(min)
t
CCD
(min)
CAS latency=3
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. For -8/H/L/10, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
( recommend : tRDL=2CLK and tDAL=2CLK + 20ns.)
URL:
www.hbe.co.kr
REV 1.0 (August.2002)
-6-
HANBit Electronics Co.,Ltd.