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HSD32M64D16A 参数 Datasheet PDF下载

HSD32M64D16A图片预览
型号: HSD32M64D16A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,基于DIMM on16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM based on16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 152 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64D16A  
CKE ³ VIH(min)  
ICC2NS  
CLK £ VIL(max), tCC=¥  
Input signals are stable  
CKE £ VIL(max), tCC=10ns  
112  
Active standby  
current in power-  
down mode  
ICC3P  
80  
80  
mA  
mA  
ICC3PS  
CKE&CLK £ VIL(max) tCC=¥  
Active standby  
current in  
CKE³ VIH(min), CS*³ VIH(min)  
tCC=10ns Input signals are  
changed one time during 20ns  
CKE³ VIH(min) CLK £VIL(max)  
tCC=¥ Input signals are stable  
IO = 0 mA Page burst  
ICC3  
N
480  
320  
non power-down  
mode  
ICC3NS  
(One bank active)  
Operating current  
(Burst mode)  
ICC4  
4Banks Activated  
2400  
3520  
2320 2000  
2000  
3360  
mA  
1
2
tCCD = 2CLKs  
Refresh current  
ICC5  
ICC6  
tRC ³ tRC(min)  
3520  
3360  
mA  
mA  
mA  
24  
12.8  
Self refresh current  
CKE £ 0.2V  
Notes:  
1. Measured with outputs open.  
2. Refresh period is 64ms.  
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).  
AC OPERATING TEST CONDITIONS  
(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)  
PARAMETER  
Value  
2.4/0.4  
1.4  
UNIT  
AC Input levels (Vih/Vil)  
V
Input timing measurement reference level  
Input rise and fall time  
V
tr/tf = 1/1  
1.4  
ns  
V
Output timing measurement reference level  
Output load condition  
See Fig. 2  
URL: www.hbe.co.kr  
REV 1.0 (August.2002)  
6
HANBit Electronics Co.,Ltd.