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HSD32M64D16A 参数 Datasheet PDF下载

HSD32M64D16A图片预览
型号: HSD32M64D16A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,基于DIMM on16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit), DIMM based on16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 152 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64D16A  
AC CHARACTERISTICS  
(AC operating conditions unless otherwise noted)  
-13  
MAX MIN  
-12  
MAX MIN  
-10  
MAX MIN  
-10L  
PARAMETER  
SYMBOL  
UNIT  
NOTE  
MIN  
MAX  
CLK cycle time CAS  
7.5  
8
-
10  
10  
10  
12  
latency=3  
tCC  
1000  
1000  
1000  
1000  
ns  
1
CAS  
-
latency=2  
CAS  
CLK to valid  
output delay  
5.4  
-
6
-
6
6
6
7
latency=3  
CAS  
tSAC  
ns  
ns  
1,2  
latency=2  
CAS  
Output data  
hold time  
2.7  
-
3
-
3
3
3
3
latency=3  
CAS  
tOH  
2
latency=2  
CLK high pulse width  
CLK low pulse width  
Input setup time  
tCH  
tCL  
2.5  
2.5  
1.5  
0.8  
1
3
3
2
1
1
3
3
2
1
1
3
3
2
1
1
ns  
ns  
ns  
ns  
ns  
3
3
3
3
3
tSS  
tSH  
tSLZ  
Input hold time  
CLK to output in Low-Z  
CLK to output  
in Hi-Z  
CAS  
5.4  
-
6
-
6
6
6
7
ns  
ns  
2
latency=3  
CAS  
tSHZ  
latency=2  
Notes :  
1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf) = 1ns.  
If tr & tf is longer than 1ns, transient time compensation should be considered  
ie., [(tr + tf)/2-1]ns should be added to the parameter.  
URL: www.hbe.co.kr  
REV 1.0 (August.2002)  
8
HANBit Electronics Co.,Ltd.