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HGTD3N60C3 参数 Datasheet PDF下载

HGTD3N60C3图片预览
型号: HGTD3N60C3
PDF下载: 下载PDF文件 查看货源
内容描述: 6A , 600V , UFS系列N沟道IGBT的 [6A, 600V, UFS Series N-Channel IGBTs]
分类和应用: 晶体晶体管开关电动机控制瞄准线双极性晶体管
文件页数/大小: 9 页 / 231 K
品牌: HARRIS [ HARRIS CORPORATION ]
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HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82Ω, L = 1mH
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82Ω, L = 1mH
100
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
10
1
R
θ
JC
= 3.75
o
C/W
2
3
V
GE
= 15V
V
GE
= 10V
4
5
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FREQUENCY = 1MHz
C
IES
400
C, CAPACITANCE (pF)
480
12
300
360
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
9
200
C
OES
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
240
6
100
120
3
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
12
14
0
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
P
D
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
1
t
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
V
GE
, GATE TO EMITTER VOLTAGE (V)
500
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
600
I
G
REF = 1.060mA, R
L
= 200Ω, T
C
= 25
o
C
15