2SD667, 2SD667A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
Tstg
2SD667
120
80
5
1
2
0.9
150
–55 to +150
2SD667A
120
100
5
1
2
0.9
150
–50 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SD667
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Symbol Min
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
120
80
5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
140
12
Max
—
—
—
10
320
—
1
1.5
—
—
2SD667A
Min
120
100
5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
140
12
Max
—
—
—
10
200
—
1
1.5
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V,
I
C
= 150 mA*
2
V
CE
= 5 V,
I
C
= 500 mA*
2
I
C
= 500 mA,
I
B
= 50 mA*
2
V
CE
= 5 V,
I
C
= 150 mA*
2
V
CE
= 5 V,
I
C
= 150 mA*
2
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE1
*
1
h
FE2
Collector to emitter
saturation voltage
V
CE(sat)
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Cob
Notes: 1. The 2SD667 and 2SD667A are grouped by h
FE1
as follows.
2. Pulse test
B
2SD667
2SD667A
60 to 120
60 to 120
C
100 to 200
100 to 200
D
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
