2SD667, 2SD667A
Saturation Voltage
vs. Collector Current
Base to Emitter Saturation Voltage V
BE(sat)
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
V
CE(sat)
I
C
= 10 I
B
Pulse
V
BE(sat)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
–25
°
C
Ta =
25
75
75
5
2
°
C
–25
=
Ta
Gain Bandwidth Product
vs. Collector Current
Collector Output Capacitance C
ob
(pF)
240
Gain Bandwidth Product f
T
(MHz)
V
CE
= 5 V
200
160
120
80
40
0
10
200
100
50
20
10
5
2
1
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
30
100
300
Collector Current I
C
(mA)
1,000
2
5
10 20
50 100
Collector to Base Voltage V
CB
(V)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
