2SJ319(L), 2SJ319(S)
Power vs. Temperature Derating
20
Pch (W)
I
D
(A)
–50
–30
–10
–3
–1
–0.3
–0.1
–0.05
0
50
100
150
Tc (°C)
200
–1
Maximum Safe Operation Area
15
Channel Dissipation
10
5
1
10
0 µs
0
µs
PW
1
m
DC
=
s
10
O
pe
m
s
ra
(1
tio
sh
n
(T
ot
Operation in
c
)
this area is
limited by R
DS(on)
=
25
°C
)
Drain Current
Ta = 25 °C
–3
–10
–30
–100 –300 –500
Case Temperature
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–5
–10 V
I
D
(A)
–4 Pulse Test
–8 V
–6 V
(A)
–4
–5
Typical Transfer Characteristics
25 °C
Tc = –25 °C
–3
I
D
75 °C
–3
Drain Current
–5 V
–2
–4 V
V
GS
= –3.5 V
0
–4
–8
–12
Drain to Source Voltage
–16
–20
V
DS
(V)
Drain Current
–2
–1
–1
V
DS
= –10 V
Pulse Test
–2
–4
–6
Gate to Source Voltage
–8
–10
V
GS
(V)
0
3
HITACHI [ HITACHI SEMICONDUCTOR ]
