2SJ399
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
100
µs,
duty cycle
≤
10%
2. Marking is “ZF–”
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch
Tch
Tstg
Ratings
–30
±20
–0.2
–0.4
–0.2
150
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
–30
±20
—
—
–1.0
—
—
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.7
2.0
1.1
22.3
0.17
530
2170
7640
7690
Max
—
—
±2
–1
–2.0
5.0
3.0
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Test conditions
I
D
= –100
µA,
V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
I
D
= –10
µA,
V
DS
= –5 V
I
D
= –20 mA
V
GS
= –4 V*
1
I
D
= –10 mA
V
GS
= –10 V*
1
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –0.1 A
V
GS
= –10 V
R
L
= 100
Ω
PW = 5
µs
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
V
GS(off)
R
DS(on)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
