2SK1153, 2SK1154
Power vs. Temperature Derating
60
Channel Dissipation Pch (W)
50
20
Drain Current I
D
(A)
10
5
2
0.1
0.5
0.2
0.01
0.05
0
50
100
Case Temperature T
C
(°C)
150
1
is
10
th
0
in ted
µ
s
n i
io lim
)
D
1
at is
(on
C
r
m
O
pe a
S
s
pe
O are R
D
y
ra
b
tio
n
(T
C
=
25
°
C
)
Ta = 25°C
2SK1154
2SK1153
10
µ
s
Maximum Safe Operation Area
40
PW
=
10
s
m
(1
20
3
30
10
100 300 1,000
Drain to Source Voltage V
DS
(V)
)
ot
sh
Typical Output Characteristics
5
Pulse Test
4
Drain Current I
D
(A)
10 V
8V
Drain Current I
D
(A)
6V
5.5 V
5V
4
5
Typical Transfer Characteristics
–25°C
V
DS
= 10 V
Pulse Test
T
C
= 25°C
3
75°C
2
3
2
4.5 V
1
V
GS
= 4 V
1
0
4
8
12
16
Drain to Source Voltage V
DS
(V)
20
0
2
4
6
8
Gate to Source Voltage V
GS
(V)
10
4
HITACHI [ HITACHI SEMICONDUCTOR ]
