2SK1161, 2SK1162
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Symbol Min
2SK1161 V
(BR)DSS
2SK1162
V
(BR)GSS
I
GSS
450
500
±30
—
—
—
—
—
—
±10
250
V
µA
µA
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS(off)
2.0
—
—
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
4.0
—
—
—
—
—
—
—
—
—
—
0.6
0.7
7.0
1050
280
40
15
60
90
45
1.0
350
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 100 A/µs
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
I
D
= 5 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
Ω
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
1
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK1161 I
DSS
2SK1162
Gate to source cutoff voltage
Static Drain to source 2SK1161 R
DS(on)
on state resistance
2SK1162
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
See characteristic curves of 2SK1157, 2SK1158.
3
HITACHI [ HITACHI SEMICONDUCTOR ]
