2SK1666
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
1,000
100
10
di/dt = 50 A/µs
GS = 0, Ta = 25°C
Ciss
V
200
100
50
Coss
Crss
20
10
VGS = 0
f = 1 MHz
5
2
1
5
10
20
50 100 200
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
td (off)
Dynamic Input Characteristics
1,000
100
80
60
40
20
20
16
12
8
ID = 35 A
500
tf
tr
200
100
VDS
VDD = 10 V
25 V
50
td (on)
10 V
4
VDD = 50 V
25 V
10 V
.
=
20
10
VGS = 10 V, VDD . 30 V
PW = 2 µs, duty ≤ 1%
0
0.5
1
2
5
10
20
50
0
40
80
120
160
200
Drain Current ID (A)
Gate Charge Qg (nc)
6
HITACHI [ HITACHI SEMICONDUCTOR ]
