2SK2933
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1.0
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
0.5
0.2
0.1
V
GS
= 4 V
10 V
I
= 20 A
D
0.05
10 A
5 A
0.02
0.01
12
Gate to Source Voltage
0
4
8
16
20
1
2
5
10 20
50 100
V
(V)
Drain Current
I
(A)
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
20
10
5
0.20
Pulse Test
0.16
0.12
0.08
0.04
Tc = –25 °C
25 °C
5 A
I
= 10 A
D
V
= 4 V
GS
2
1
75 °C
20 A 10 A 5 A
V
= 10 V
DS
Pulse Test
10 V
0
0
–40
0.5
0.1 0.2
20
10
40
80
120
160
0.5
1
2
5
Case Temperature Tc (°C)
Drain Current
I
(A)
D
5
HITACHI [ HITACHI SEMICONDUCTOR ]
