2SK2933
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
2000
1000
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
200
100
50
Ciss
500
200
Coss
Crss
100
50
20
10
5
20
10
V
= 0
GS
f = 1 MHz
0.1 0.2
0.5
1
2
5
10 20
(A)
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 15A
Switching Characteristics
1000
100
80
20
16
12
8
I
D
300
100
t
V
d(off)
GS
V
DS
60
40
20
t
f
t
r
V
= 10 V
25 V
30
10
DD
t
d(on)
50 V
4
0
V
= 50 V
25 V
10 V
3
1
DD
V
= 10 V, V
= 30 V
DD
GS
PW = 5 µs, duty < 1 %
0
0.5
Drain Current
8
16
24
32
400
0.1 0.2
1
2
5
10 20
Gate Charge Qg (nc)
I
(A)
D
6
HITACHI [ HITACHI SEMICONDUCTOR ]
