HAT1021R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–0.5
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
V
GS
= –2.5 V
–4 V
–0.4
–0.3
I
D
= –5 A
–0.2
–2 A
–1 A
–6
–2
–4
Gate to Source Voltage
–10
V
GS
(V)
–8
0.05
–0.1
0.02
0.01
–0.2
0
–0.5 –1 –2
Drain Current
–10 –20
I
D
(A)
–5
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
75 °C
25 °C
Tc = –25 °C
0.12
V
GS
= –2.5 V
–1 A, –2 A
I
D
= –5 A
0.08
2
1
0.5
–0.2
V
DS
= –10 V
Pulse Test
–0.5 –1 –2
–5 –10 –20
Drain Current I
D
(A)
0.04
–4 V
0
–40
–1 A, –2 A, –5 A
0
40
80
120
160
Case Temperature Tc (°C)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
