HAT1021R
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
10000
3000
1000
200
100
50
Ciss
Coss
Crss
300
100
20
30
10
10
5
di / dt = 20 A / µs
V
= 0
GS
V
GS
= 0, Ta = 25 °C
f = 1 MHz
–0.2 –0.5 –1 –2
Reverse Drain Current
–5
(A)
–0.1
–10
0
–4
–8
–12
-16 –20
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
Switching Characteristics
500
0
–10
–20
–30
0
V
= –5 V
–10 V
–20 V
DD
t
d(off)
200
100
50
–2
t
r
–4
–6
t
f
V
GS
V
DS
t
d(on)
V
= –20 V
–10 V
–5 V
DD
20
10
5
–40
–50
–8
V
= –4 V, V
= –10 V
DD
GS
I
= –5.5 A
8
D
PW = 3 µs, duty < 1 %
–5
(A)
–10
40
0
16
24
32
–0.1 –0.2 –0.5 –1 –2
–10
Gate Charge Qg (nc)
Drain Current
I
D
5
HITACHI [ HITACHI SEMICONDUCTOR ]
