HM6216255H Series
4M high Speed SRAM (256-kword
×
16-bit)
ADE-203-763D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word
×
16-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
•
Single 5.0 Vsupply : 5.0 V
±
10 %
•
Access time: 10/12/15 ns (max)
•
Completely static memory
•
•
•
•
•
•
•
•
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 200/180/160 mA (max)
TTL standby current: 70/60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pinout
HITACHI [ HITACHI SEMICONDUCTOR ]
