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HN27C4000G-10 参数 Datasheet PDF下载

HN27C4000G-10图片预览
型号: HN27C4000G-10
PDF下载: 下载PDF文件 查看货源
内容描述: 524288字? 8位/ 262144字×16位CMOS紫外线可擦除和可编程只读存储器 [524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM]
分类和应用: 存储可编程只读存储器
文件页数/大小: 20 页 / 125 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HN27C4000G Series
AC Characteristics
(V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.5 V ± 0.3 V, Ta = 25°C ± 5°C)
Test Conditions
• Input pulse levels: 0.45 to 2.4 V
• Input rise and fall times:
20 ns
• Reference levels for measuring timing: Inputs; 0.8 V, 2.0 V,
Outputs; 0.8 V, 2.0 V
Item
Address setup time
OE
setup time
Data setup time
Address hold time
Data hold time
OE
high to output float delay
V
PP
setup time
V
CC
setup time
CE
initial programming
pulse width
CE
setup time
Data valid from
OE
CE
pulse width during data latch
OE
= V
H
setup time
OE
= V
H
hold time
V
PP
hold time
*2
Symbol
t
AS
t
OES
t
DS
t
AH
t
DH
t
DF*1
t
VPS
t
VCS
t
PW
t
CES
t
OE
t
LW
t
OHS
t
OHH
t
VRS
Min
2
2
2
0
2
0
2
2
47.5
2
0
1
2
2
1
Typ
50.0
Max
130
52.5
150
Unit
µs
µs
µs
µs
µs
ns
µs
µs
µs
µs
ns
µs
µs
µs
µs
Test conditions
Notes: 1. t
DF
is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
2. Page program mode will be reset when V
PP
is set to V
CC
or less.
11