PF01411B
Electrical Characteristics
(Tc = 25°C)
Item
Frequency range
Control voltage range
Drain cutoff current
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Output power (1)
Symbol
f
V
APC
I
DS
η
T
2nd H.D.
3rd H.D.
VSWR (in)
Pout (1)
Min
880
0.5
—
40
—
—
—
35.5
Typ
—
—
—
45
–45
–45
1.5
36.0
Max
915
2.2
100
—
–35
–35
3
—
Unit
MHz
V
µA
%
dBc
dBc
—
dBm
Pin = 0dBm, V
DD
= 3.5V,
V
APC
= 2.2V, R
L
= Rg = 50Ω,
Tc = 25°C
Pin = 0dBm, V
DD
= 3.0V,
V
APC
= 2.2V, R
L
= Rg = 50Ω,
Tc = 85°C
Pin = 0dBm, V
DD
= 3.5V,
V
APC
= 0.5V, R
L
= Rg = 50Ω,
Tc = 25°C
Pin = 0dBm, V
DD
= 3.5V,
Pout = 0 to 35.5dBm
R
L
= Rg = 50Ω, Tc = 25°C
Pin = 0dBm, V
DD
= 3 to 5.1V,
Pout
≤
35.5dBm,
Vapc
≤
2.2V GSM pulse.
Rg = 50Ω, Tc = 25°C,
Output VSWR = 6 : 1 All phases
Pin = 0dBm, V
DD
= 3 to 5.1V,
Pout
≤
35.5dBm,
Vapc
≤
2.2V GSM pulse.
Rg = 50Ω, t = 20sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
V
DD
= 8V, V
APC
= 0V
Pin = 0dBm, V
DD
= 3.5V,
Pout = 35.5dBm, Vapc = control
R
L
= Rg = 50Ω, Tc = 25°C
Test Condition
Output power (2)
Pout (2)
33.5
34.2
—
dBm
Isolation
—
—
–40
–36
dBm
Switching time
tr, tf
—
1
2
µs
Stability
—
No parasitic oscillation
—
Load VSWR tolerance
—
No degradation
—
2
HITACHI [ HITACHI SEMICONDUCTOR ]
