SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement (SE3455)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15
0
+15 +30 +45 +60
Fig. 2
Radiant Intensity vs
Angular Displacement (SE5455)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -30 -20 -10
0
+10 +20 +30 +40
Relative intensity
INFRA-17.GRA
INFRA-23.GRA
Relative intensity
Angular displacement - degrees
Angular displacement - degrees
Fig. 3
Radiant Intensity vs
Forward Current
250
Fig. 4
Forward Voltage vs
Forward Current
Normalized radiant
intensity - %
200
150
100
50
0.0
INFRA-18.GRA
INFRA-19.GRA
Forward voltage - V
Pulsed
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0
20
40
60
80
100
0
100
200
300
400
500
Forward current - mA
Forward current - mA
Fig. 5
Forward Voltage vs
Temperature
1.35
Fig. 6
Spectral Bandwidth
Forward voltage - V
1.33
1.31
1.29
1.27
1.25
1.23
INFRA-20.GRA
IF = 100 mA
-30
-10
10
30
50
70
90
INFRA--5.GRA
1.21
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870 890 910 930 950 970 990 1010
Relative intensity
Temperature - °C
All Performance Curves Show Typical Values
28
Wavelength - nm
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changes in order to improve design and
supply the best products possible.
HONEYWELL [ HONEYWELL SOLID STATE ELECTRONICS CENTER ]
