HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-251 / TO-252
TO-220AB
TO-220FP
62.5
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 2/6
Units
2
2
3.3
°C/W
°C/W
ELectrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=480V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=1A)*
Forward Transconductance (V
DS
≥50V,
I
D
=1A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
(V
DD
=300V, I
D
=2A, R
G
=18Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
435
56
9.2
12
21
30
24
13
2
6
4.5
7.5
Max.
-
1
50
100
-100
4
4.4
-
-
-
-
-
-
-
-
22
-
-
-
-
nH
nH
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
mhos
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
Characteristic
I
S
=2A, V
GS
=0V, T
J
=25
o
C
I
S
=2A, V
GS
=0V, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
**
340
Max.
1.6
-
-
Units
V
ns
ns
**: Negligible, Dominated by circuit inductance
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
