HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
9
V
GS
=10V
V
GS
=8V
800
1000
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
Capacitance Characteristics
I
D
, Drain-Source Current (A)
8
7
6
5
Capacitance (pF)
V
GS
=6V
V
GS
=5V
600
4
3
2
1
0
0
2
4
6
8
10
V
GS
=4V
400
Ciss
200
Crss
0
0.1
1
10
100
Coss
V
DS
, Drain-Source Voltage (V)
V
DS
, Deain-Source Voltage (V)
Typical On-Resistance & Drain Current
6.0
6
Drain Current Variation with
Gate Voltage and Temperature
V
DS
=10 V
T
C
= 25 C
o
R
DS(ON)
, Drain-Source On-Resistance
...
5.5
V
GS
=10V
4.5
4.0
3.5
3.0
2.5
2.0
0
1
2
3
4
5
6
I
D
, Drain-Source Current (A)
5.0
5
4
3
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
D
, Drain Current (A)
V
GS
, Gate-Source Voltage (V)
Gate Charge Waveforms
12
10
Maximum Safe Operating Area
10
V
DS
=200V
8
I
D
, Drain Current (A)
1ms
10ms
1
V
GS
(V)
6
4
100ms
2
0
0
1
2
3
4
5
0.1
10
100
1000
Q, Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
H03N60E, H03N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
