Spec. No. : MOS200611
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
• Static
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
VGS=0V, ID=250uA
20
-
-
-
30
20
1.6
1
V
VGS=2.5V, ID=5.5A
VGS=4.5V, ID=6.5A
VDS=VGS, ID=250uA
VDS=16V, VGS=0V
-
RDS(on)
mΩ
-
-
VGS(th)
IDSS
Gate Threshold Voltage
0.6
-
V
uA
nA
S
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
-
-
-
-
IGSS
-
VGS=±4.5V, VDS=0V
±200
-
gFS
VDS=10V, ID=6.5A
30
• Dynamic
Qg
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
9
-
-
-
-
-
-
-
-
-
-
Qgs
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=10V, ID=6A, VGS=4.5V
VDS=10V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
2.4
3.6
476
65.1
49
nC
pF
Qgd
Ciss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
td(on)
tr
td(off)
tf
50
100
500
200
ns
RGEN=6Ω
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
-
-
-
1.7
1.2
A
V
VSD
VGS=0V, IS=1.5A
0.61
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Switching
Switching
ton
toff
Test Circuit
VDD
Waveforms
td(on)
tr
90%
td(off)
tf
90%
RD
VIN
D
S
VOUT
10%
10%
Output, VOUT
Inverted
VGEN
90%
RG
50%
50%
G
Pulse Width
10%
Input, VIN
H08N02CTS
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
