GM71V18163C
GM71VS18163CL
Capacitance
(V
CC
= 3.3V+/-0.3V, T
A
= 25C)
Symbol
C
I1
C
I2
C
I/O
Parameter
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Min
-
-
-
Max
5
7
7
Unit
pF
pF
pF
Note
1
1
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. UCAS and LCAS = V
IH
to disable D
OUT
.
AC Characteristics
(V
CC
= 3.3V+/-0.3V, T
A
= 0 ~
+
70C, Note 1, 2, 18, 19, 20)
Test Conditions
Input rise and fall times : 2 ns
Input levels : V
IL
= 0V, V
IH
= 3V
Input timing reference levels : 0.8V, 2.0V
Output timing reference levels : 0.8V, 2.0V
Output load : 1TTL gate + C
L
(100 pF)
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Symbol
Parameter
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
IN
Delay Time
OE Delay Time from D
IN
CAS Delay Time from D
IN
Transition Time (Rise and Fall)
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-6
C/CL-7
C/CL-5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
t
T
84
30
8
-
-
-
104
40
10
-
-
-
124
50
13
-
-
-
50
10,000
8
10,000
0
8
0
8
12
10
10
35
5
13
0
0
2
-
-
-
-
37
25
-
-
-
-
-
-
50
60
10,000
10
10,000
0
10
0
10
14
12
13
40
5
15
0
0
2
-
-
-
-
45
30
-
-
-
-
-
-
50
70
10,000
13
10,000
0
10
0
13
14
12
13
45
5
18
0
0
2
-
-
-
-
52
35
-
-
-
-
-
-
50
21
21
3
4
23
22
5
6
6
7
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
