GM72V66841ET/ELT
DC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ= 0 V)
- 7
- 75
- 8
-7K
-7J
Parameter
Symbol
Unit Test conditions Notes
Max
Max
Max
Max
Max
Burst length= 1
Operating
current
ICC1
85
85
80
2
80
80
mA
mA
1, 2, 3
5
t
RC = min
CKE = VIL,
CK = 12 ns
Standby current in
power down
ICC2P
t
Standby current in
power down
(input signal stable)
6
2
CKE=VIL,
CK= infinity
ICC2PS
ICC2N
ICC2NS
mA
mA
mA
t
0.4
6,8
Standby current in
non power down
(CAS Latency=2)
CKE,CS = VIH,
CK = 12ns
15
12
4
4
t
Standby current in
non power down
(input signal stable)
CKE = VIH,
CK = infinity
t
CKE = VIL,
CK = 12 ns,
DQ = High-Z
Active standby current
in power down
t
ICC3P
ICC3PS
ICC3N
6
5
mA
1,2,5
Active standby current
in power down
(input signal stable)
CKE = VIL,
mA
mA
2,6
1,2,4
2,9
t
CK = infinity
CKE,CS = VIH,
CK = 12 ns,
Active standby current
in non power down
t
30
DQ = High-Z
Active standby current
in non power down
(input signal stable)
CKE = VIH,
ICC3NS
ICC4
20
mA
mA
t
t
CK = infinity
CK = min
Burst
operating
current
( CL= 2 )
( CL= 3 )
120
1,2,3
3
BL = 4
ICC4
ICC5
150
150
150
160
120
120
mA
mA
Refresh current
t
RC = min
1
7
VIH >=VCC - 0.2
VIL <=0.2V
Self refresh current
ICC6
mA
0.4
7,8
-4-
Rev. 1.1/Apr.01
HYNIX [ HYNIX SEMICONDUCTOR ]
