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GM72V66841ELT-8 参数 Datasheet PDF下载

GM72V66841ELT-8图片预览
型号: GM72V66841ELT-8
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 10 页 / 90 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM72V66841ET/ELT  
AC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/-0.3 V, VSS, VSSQ = 0 V)  
(Continued)  
- 7  
- 75  
- 8  
- 7K  
- 7J  
Parameter  
Symbol  
Unit Notes  
Min Max Min Max Min Max Min Max Min Max  
Write recovery or data-in  
to precharge lead time  
Active (a) to Active (b)  
command period  
7
-
7.5  
-
8
-
10  
-
10  
-
ns  
1
1
t
RWL  
14  
-
-
15  
-
-
16  
-
-
20  
-
-
20  
-
-
ns  
t
RRD  
Refresh period  
64  
64  
64  
64  
64  
ms  
t
REF  
Notes :  
1. AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.40V.  
If tT is longer than 1ns,transition time compensation should be considered.  
2. Access time is measured at 1.40V. Load condition is CL = 50pF without termination.  
3. tLZ (min)defines the time at which the outputs achieves the low impedance state.  
4. tHZ (max)defines the time at which the outputs achieves the high impedance state.  
5. tCES define CKE setup time to CKE rising edge except Power down exit command.  
Test Condition  
• Input and output-timing reference levels: 1.4V  
• Input waveform and output load: See following figures  
I/O  
OPEN  
2.4V  
0.4V  
80%  
20%  
input  
CL  
t
T
t
T
-7-  
Rev. 1.1/Apr.01