HY57V64820HGTP
DC CHARACTERISTICS II
(TA=0 to 70
°C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Speed
Parameter
Symbol
Test Condition
-6
-7
85
Unit
-K
85
2
2
Note
-H
85
-8
85
-P/S
80
mA
mA
mA
1
Operating Current
I
DD1
I
DD2P
I
DD2PS
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
CKE
≤
V
IL
(max), t
CK
= min
CKE
≤
V
IL
(max), t
CK
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
CKE
≤
V
IL
(max), t
CK
= min
CKE
≤
V
IL
(max), t
CK
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
CL=2
90
Precharge Standby Current
in Power Down Mode
I
DD2N
Precharge Standby Current
in Non Power Down Mode
I
DD2NS
I
DD3P
I
DD3PS
15
mA
12
6
5
mA
mA
mA
Active Standby Current
in Power Down Mode
I
DD3N
Active Standby Current
in Non Power Down Mode
I
DD3NS
30
mA
20
150
NA
150
NA
160
1
150
150
120
130
120
mA
mA
mA
mA
mA
uA
2
3
4
1
Burst Mode Operating
Current
Auto Refresh Current
I
DD4
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
CKE
≤
0.2V
Self Refresh Current
I
DD6
400
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V64820HGTP-7/K/H/8/P/S
4.HY57V64820HGLTP-7/K/H/8/P/S
Rev. 0.1/ Nov. 03
6
HYNIX [ HYNIX SEMICONDUCTOR ]
