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HY5DU561622DTP-H 参数 Datasheet PDF下载

HY5DU561622DTP-H图片预览
型号: HY5DU561622DTP-H
PDF下载: 下载PDF文件 查看货源
内容描述: 256M DDR SDRAM ( 268435456位CMOS双数据速率( DDR )同步DRAM) [256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 37 页 / 403 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY5DU561622DTP-H的Datasheet PDF文件第8页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第9页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第10页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第11页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第13页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第14页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第15页浏览型号HY5DU561622DTP-H的Datasheet PDF文件第16页  
HY5DU56422D(L)TP
HY5DU56822D(L)TP
HY5DU561622D(L)TP
OPERATION COMMAND TRUTH TABLE-III
Current
State
/CS
H
L
L
L
ROW
ACTIVATING
L
L
L
L
L
H
L
L
L
WRITE
RECOVERING
L
L
L
L
L
H
L
L
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
L
L
L
L
L
L
H
L
REFRESHING
L
L
/RAS
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
/CAS
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
/WE
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
Address
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
Command
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
Action
NOP - Enter ROW ACT after tRCD
NOP - Enter ROW ACT after tRCD
ILLEGAL
4
ILLEGAL
4,10
ILLEGAL
4,10
ILLEGAL
4,9,10
ILLEGAL
4,10
ILLEGAL
11
ILLEGAL
11
NOP - Enter ROW ACT after tWR
NOP - Enter ROW ACT after tWR
ILLEGAL
4
ILLEGAL
ILLEGAL
ILLEGAL
4,10
ILLEGAL
4,11
ILLEGAL
11
ILLEGAL
11
NOP - Enter precharge after tDPL
NOP - Enter precharge after tDPL
ILLEGAL
4
ILLEGAL
4,8,10
ILLEGAL
4,10
ILLEGAL
4,10
ILLEGAL
4,11
ILLEGAL
11
ILLEGAL
11
NOP - Enter IDLE after tRC
NOP - Enter IDLE after tRC
ILLEGAL
11
ILLEGAL
11
Rev. 0.1 /May 2004
12