Preliminary Data Sheet
ICE10N60FP
Output Characteristics
30
V
GS
=10V to 8V
7V
Transfer Characteristics
30
25
I
D
- Drain Current (A)
20
15
10
5
0
T
J
= 150˚C
25˚C
25
I
D
- Drain Current (A)
20
6V
15
10
5V
5
0
0
5
10
15
20
0
2
V
DS
- Drain-to-Source Voltage (V)
4
6
8
V
GS
- Gate-to-Source (V)
10
On Resistance vs Drain Current
800
R
DS(on)
- On-State Resistance (mΩ)
700
600
500
V
GS
= 10V
On Resistance vs Junction Temperature
4.0
R
DS(on)
- On State Resistance
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10V
I
D
= 5A
400
300
200
100
0
0
5
10
15
20
I
D
- Drain current (A)
25
30
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (˚C)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
GS(th)
- Gate Threshold Voltage
(Normalized)
9
8
7
6
5
V
DS
= 480V
I
D
= 10A
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250μA
4
3
2
1
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (˚C)
SP-10N60FP-000-2
05/15/2013
4
ICEMOS [ Icemos Technology ]
