Preliminary Data Sheet
ICE10N60FP
Capacitance
100000
V
(BR)DSS
- Drain-to-Source Breakdown Voltage
(Normalized)
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
10000
C-Capacitance (pF)
Ciss
1.1
I
D
= 1mA
1000
Coss
1.0
100
0.9
10
Crss
1
0
200
400
V
DS
- Drain-to-Source Voltage (V)
600
0.8
-50
-25
0
25
50
75
100
T
J
- Junction Temperature (˚C)
125
150
Maximum Rated Forward Biased Safe Operating Area
100
r(t), Transient Thermal Resistance
(Normalized)
Single Pulse,
Tc = 25
o
C,
T
j
=150
o
C,
V
GS
= 10V
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
10
I
D
- Drain Current (A)
10us
0.10
0.1
0.05
0.02
100us
1
1ms
10ms
0.01
0.1
R
DS(on)
Limit
Package Limit
Thermal Limit
DC
Single Pulse
0.01
0.00
1
10
100
V
DS
- Drain-to-Source Voltage (V)
1000
1.0E-06
1.0E-04
1.0E-02
1.0E+00
t - Time (s)
SP-10N60FP-000-2
05/15/2013
5
ICEMOS [ Icemos Technology ]
