Preliminary Data Sheet
ICE20N170B
Output Characteristics
60
50
V
GS
=10 to 7V
Transfer Characteristics
60
50
40
30
20
10
0
I
D
- Drain Current (A)
40
6V
30
20
5V
10
I
D
- Drain Current (A)
T
J
= 150˚C
25˚C
0
0
5
10
15
0
2
V
DS
- Drain-to-Source Voltage (V)
4
6
8
V
GS
- Gate-to-Source (V)
10
On Resistance vs Drain Current
500
R
DS(on)
- On-State Resistance (mΩ)
R
DS(on)
- On State Resistance
(Normalized)
On Resistance vs Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10V
I
D
= 10A
400
300
V
GS
= 10V
200
100
0
0
10
20
30
40
I
D
- Drain current (A)
50
60
0.0
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (˚C)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
GS(th)
- Gate Threshold Voltage
(Normalized)
9
8
7
6
5
V
DS
=
480V
I
D
= 20A
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250μA
4
3
2
1
0
0
10
20
30
40
50
60
70
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (˚C)
SP-20N170B-000-2b
05/31/2013
4
ICEMOS [ Icemos Technology ]
