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IC41C16100S-50TI 参数 Datasheet PDF下载

IC41C16100S-50TI图片预览
型号: IC41C16100S-50TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16 ( 16兆位)动态RAM与EDO页模式 [1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 21 页 / 673 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC41C16100S
IC41LV16100S
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
t
ACH
t
OEH
t
DS
t
DH
t
RWC
t
RWD
t
CWD
t
AWD
t
PC
t
RASP
t
CPA
t
PRWC
t
COH
t
OFF
t
WHZ
t
CLCH
t
CSR
t
CHR
t
ORD
t
REF
t
REF
t
T
Parameter
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Auto Refresh Period (1,024 Cycles)
Self Refresh Period (1,024 Cycles)
Transition Time (Rise or Fall)
(2, 3)
-45
Min. Max.
15
6
0
6
95
55
21
32
16
45
51
4
1.6
3
8
5
8
0
1
100K
27
11
10
16
128
50
-50
Min. Max.
15
8
0
8
108
64
26
39
20
50
56
4
1.6
3
10
5
8
0
1
100K
30
12
10
16
128
50
-60
Min. Max.
15
10
0
10
133
77
32
47
25
60
68
4
1.6
3
10
5
10
0
1
100K
35
15
10
16
128
50
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V
±
10%)
One TTL Load and 50 pF (Vcc = 3.3V
±
10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V
±
10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V
±
10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V
±
10%, 3.3V
±
10%)
Integrated Circuit Solution Inc.
DR010-0D 11/26/2004
9