IS61C632A
INTERLEAVED BURST ADDRESS TABLE (MODE = V
CCQ
or No Connect)
External Address
A1 A0
00
01
10
11
1st Burst Address
A1 A0
01
00
11
10
2nd Burst Address
A1 A0
10
11
00
01
3rd Burst Address
A1 A0
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND
Q
)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
BIAS
T
STG
P
D
I
OUT
V
IN
, V
OUT
V
IN
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to GND for I/O Pins
Voltage Relative to GND for
for Address and Control Inputs
Value
–10 to +85
–55 to +150
1.8
100
–0.5 to V
CCQ
+ 0.3
–0.5 to 5.5
Unit
°C
°C
W
mA
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Circuit Solution Inc.
SSR001-0B
5
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
