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IS61LV25616-8K 参数 Datasheet PDF下载

IS61LV25616-8K图片预览
型号: IS61LV25616-8K
PDF下载: 下载PDF文件 查看货源
内容描述: 256× 16高速异步静态CMOS与3.3V供电的RAM [256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 10 页 / 460 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV25616
AC WAVEFORMS
WRITE CYCLE NO. 4

(LB,
UB
Controlled, Back-to-Back Write)
(1,3)
t
WC
ADDRESS
ADDRESS 1
t
WC
ADDRESS 2

OE
t
SA
CE
LOW
!
t
HA
t
SA
t
HA
t
PWB
WORD 2
WE
t
PWB
UB, LB
WORD 1
"
t
LZWE
t
HZWE
D
OUT
HIGH-Z
#
$
%
&
'



DATA UNDEFINED
t
SD
D
IN
DATA
IN
VALID
t
HD
t
SD
DATA
IN
VALID
t
HD
Notes:
1. The internal Write time is defined by the overlap of
CE
= LOW,
UB
and/or
LB
= LOW, and
WE
= LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
t

SA
,
t

HA
,
t

SD
, and
t

HD
timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with
OE
HIGH for a minimum of 4 ns before
WE
= LOW to place the I/O in a HIGH-Z state.
3.
WE
may be held LOW across many address cycles and the
LB, UB
pins can be used to control the Write function.
Integrated Circuit Solution Inc.
SR040-0C
9