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IS61LV256-12JI 参数 Datasheet PDF下载

IS61LV256-12JI图片预览
型号: IS61LV256-12JI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低压CMOS静态RAM [32K X 8 LOW VOLTAGE CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 121 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV256
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Speed
8, 10, 12
15, 20
All
V
CC
3.3V, +10%, –5%
3.3V ± 10%
3.3V + 10%, –5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage

Input Leakage
Output Leakage
GND
V
IN
V
CC
GND
V
OUT
V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–5
–1
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –0.3V (DC); V
IL
(min.) = –2.0V (pulse width
2.0 ns).
V
IH
(max.) = V
CC
+ 0.5V (DC); V
IH
(max.) = Vcc + 2.0V (pulse width
2.0 ns).
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Sym. Parameter
I
CC
I
SB

Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
CC
= Max.,
CE
V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
-20 ns
Min. Max.
Unit
— 120
— 130
— 25
— 30
— 2
— 5
— 110
— 120
— 25
— 30
— 2
— 5
— 100
— 110
— 25
— 30
— 2
— 5
— 90
— 100
— 25
— 30
— 2
— 5
— 80
— 90
— 25
— 30
— 2
— 5
mA
mA
I
SB
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
5
Unit
p.
p.
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Circuit Solution Inc.
SR004-0D
3