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IS62LV2568LL-70TI 参数 Datasheet PDF下载

IS62LV2568LL-70TI图片预览
型号: IS62LV2568LL-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗和低Vcc的CMOS静态RAM [256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 455 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS62LV2568L
IS62LV2568LL
WRITE CYCLE NO. 2
(CE1, CE2 Controlled)
(1,2)
t
WC
ADDRESS
t
SA
t
SCE1
t
HA
CE1
t
SCE2
CE2
t
AW
t
PWE
(4)
WE
t
HZWE
t
LZWE
HIGH-Z
DOUT
DATA UNDEFINED
t
SD
t
HD
DIN
DATA-IN VALID
Notes:
1. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the Write.
2. I/O will assume the HIGH-z state if
OE
=V
IH
.
8
Integrated Circuit Solution Inc.
SR025_0C