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IDT7005S15J 参数 Datasheet PDF下载

IDT7005S15J图片预览
型号: IDT7005S15J
PDF下载: 下载PDF文件 查看货源
内容描述: 高速8K ×8双端口静态RAM [HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 20 页 / 265 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7005S/L  
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DC ELECTRICAL CHARACTERISTICS OVER THE  
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1)(Cont'd.) (VCC = 5.0V ± 10%)  
7005X35  
7005X55  
7005X70  
Mil. Only  
Test  
Symbol  
Parameter  
Condition  
Version  
MIL.  
Typ.(2) Max. Typ.(2) Max. Typ.(2) Max. Unit  
ICC  
Dynamic Operating  
Current  
CE = VIL, Outputs Open  
SEM = VIH  
S
L
150  
140  
300  
250  
150  
140  
300  
250  
140  
130  
300 mA  
250  
(3)  
(Both Ports Active)  
f = fMAX  
COM’L.  
MIL.  
S
L
150  
140  
250  
210  
150  
140  
250  
210  
ISB1  
ISB2  
Standby Current  
(Both Ports — TTL  
CEL = CER = VIH  
SEMR = SEML = VIH  
S
L
13  
10  
80  
65  
13  
10  
80  
65  
10  
10  
80 mA  
65  
(3)  
Level Inputs)  
f = fMAX  
COM’L.  
MIL.  
S
L
13  
10  
60  
50  
13  
10  
60  
50  
(5)  
Standby Current  
(One Port — TTL  
Level Inputs)  
CE"A"=VIL and CE"B"=VIL  
S
L
85  
75  
85  
75  
190  
160  
155  
130  
85  
75  
85  
75  
190  
160  
155  
130  
80  
70  
190 mA  
Active Port Outputs Open  
160  
(3)  
f = fMAX  
COM’L.  
S
L
SEMR = SEML = VIH  
ISB3  
ISB4  
Full Standby Current  
(Both Ports — All  
Both Ports CEL and  
CER > VCC - 0.2V  
MIL.  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
1.0  
0.2  
30 mA  
10  
CMOS Level Inputs)  
VIN > VCC - 0.2V or  
COM’L.  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
VIN < 0.2V, f = 0(4)  
SEMR = SEML > VCC - 0.2V  
Full Standby Current  
(One Port — All  
One Port CE"A" < 0.2V  
CE"B" > VCC - 0.2V(5)  
MIL.  
S
80  
175  
80  
175  
75  
175 mA  
CMOS Level Inputs)  
SEMR = SEML > VCC - 0.2V  
VIN > VCC - 0.2V or  
VIN < 0.2V  
L
70  
80  
150  
135  
70  
80  
150  
135  
65  
150  
COM’L.  
S
Active Port Outputs Open,  
f = fMAX  
L
70  
110  
80  
110  
(3)  
NOTES:  
2738 tbl 10  
1. "X" in part numbers indicates power rating (S or L).  
2. VCC = 5V, TA = +25°C and are not production tested. ICC DC = 120mA (typ.)  
3. At f = fMAX, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.  
4. f = 0 means no address or control lines change.  
5. Port "A" may be either left or right port. Port "B" is the port opposite port "A".  
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES (L Version Only)  
(VLC = 0.2V, VHC = VCC - 0.2V)(4)  
Symbol  
Parameter  
VCC for Data Retention  
Data Retention Current  
Test Condition  
VCC = 2V  
Min.  
2.0  
Typ.(1)  
Max.  
Unit  
V
VDR  
ICCDR  
CE > VHC  
MIL.  
100  
100  
4000  
1500  
µA  
VIN > VHC or VLC  
SEM > VHC  
COM’L.  
(3)  
tCDR  
Chip Deselect to Data Retention Time  
Operation Recovery Time  
0
ns  
(3)  
(2)  
tR  
tRC  
ns  
NOTES:  
2738 tbl 11  
1. TA = +25°C, VCC = 2V, and are not production tested.  
2. tRC = Read Cycle Time  
3. This parameter is guaranteed by device characteriation, but is not production tested.  
DATA RETENTION WAVEFORM  
DATA RETENTION MODE  
V
DR  
VCC  
4.5V  
4.5V  
2V  
t
CDR  
tR  
V
DR  
V
IH  
VIH  
CE  
2738 drw 05  
6.06  
6