IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE(5)
IDT7025X15
Com'l. Only
IDT7025X17
Com'l. Only
IDT7025X20
IDT7025X25
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
tEW
tAW
tAS
Write Cycle Time
Chip Enable to End-of-Write(3)
15
12
12
0
—
—
—
—
—
—
—
10
—
10
—
—
—
17
12
12
0
—
—
—
—
—
—
—
10
—
10
—
—
—
20
15
15
0
—
—
—
—
—
—
—
12
—
12
—
—
—
25
20
20
0
—
—
—
—
—
—
—
15
—
15
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End-of-Write
Address Set-up Time(3)
tWP
tWR
tDW
tHZ
Write Pulse Width
12
0
12
0
15
0
20
0
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time(1, 2)
Data Hold Time(4)
Write Enable to Output in High-Z(1, 2)
Output Active from End-of-Write(1, 2, 4)
SEM Flag Write to Read Time
SEM Flag Contention Window
10
—
0
10
—
0
15
—
0
15
—
0
tDH
tWZ
tOW
tSWRD
tSPS
—
0
—
0
—
0
—
0
5
5
5
5
5
5
5
5
IDT7025X35
IDT7025X55
IDT7025X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
tEW
tAW
tAS
Write Cycle Time
35
30
30
0
—
—
—
—
—
—
—
15
—
15
—
—
—
55
45
45
0
—
—
—
—
—
—
—
25
—
25
—
—
—
70
50
50
0
—
—
—
—
—
—
—
30
—
30
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to End-of-Write(3)
Address Valid to End-of-Write
Address Set-up Time(3)
tWP
tWR
tDW
tHZ
Write Pulse Width
25
0
40
0
50
0
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time(1, 2)
Data Hold Time(4)
Write Enable to Output in High-Z(1, 2)
Output Active from End-of-Write(1, 2, 4)
SEM Flag Write to Read Time
SEM Flag Contention Window
15
—
0
30
—
0
40
—
0
tDH
tWZ
tOW
tSWRD
tSPS
—
0
—
0
—
0
5
5
5
5
5
5
NOTES:
2683 tbl 14
1. Transition is measured ±500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. Either condition must be
valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).
6.16
9
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
