IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range
(V
CC
= 5.0V ± 10%)
7132SA
7142SA
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Open Drain Output
Low Voltage (BUSY)
Output High Voltage
Test Conditions
V
CC
= 5.5V,
V
IN
= 0V to V
CC
V
CC
= 5.5V,
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OL
= 16mA
I
OH
= -4mA
Min.
___
7132LA
7142LA
Min.
___
Max.
10
10
0.4
0.5
___
Max.
5
5
0.4
0.5
___
Unit
µA
___
___
µA
V
V
V
2692 tbl 05
___
___
___
___
2.4
2.4
NOTE:
1. At Vcc
<
2.0V leakages are undefined.
Data Retention Characteristics
(LA Version Only)
Symbol
V
DR
I
CCDR
Parameter
V
CC
for Data Retention
Data Retention Current
V
CC
= 2.0V
CE
> V
CC
-0.2V
V
IN
> V
CC
-0.2V or
t
CDR
(3)
t
R
(3)
Chip Deselect to Data Retention Time
Operation Recovery Time
V
IN
< 0.2V
Mil. & Ind.
Com'l.
Test Condition
Min.
2.0
___
___
Typ.
(1)
___
Max.
___
Unit
V
µA
µA
ns
ns
2692 tbl 06
100
100
___
___
4000
1500
___
___
0
t
RC
(2)
NOTES:
1. V
CC
= 2V, T
A
= +25°C, and is not production tested.
2. t
RC
= Read Cycle Time
3. This parameter is guaranteed but not production tested.
Data Retention Waveform
DATA RETENTION MODE
V
DR
≥
2.0V
V
CC
4.5V
t
CDR
4.5V
t
R
CE
V
IH
V
DR
V
IH
2692 drw 05
,
5
6.42
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
