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IDT71V124SA10Y 参数 Datasheet PDF下载

IDT71V124SA10Y图片预览
型号: IDT71V124SA10Y
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V CMOS静态RAM 1兆欧( 128K ×8位)中心电源和接地引脚 [3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout]
分类和应用:
文件页数/大小: 8 页 / 83 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Pin Configuration
A
0
A
1
A
2
A
3
CS
I/O
0
I/O
1
V
DD
GND
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
1
32
2
31
3
30
4
29
5
28
6 SO32-2 27
7 SO32-3 26
8 SO32-4 25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
GND
V
DD
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
3873 drw 02
Absolute Maximum Ratings
(1)
Symbol
V
DD
V
IN
, V
OUT
Rating
Supply Voltage Relative
to GND
Terminal Voltage Relative
to GND
Commercial
Operating Temperature
T
A
Industrial
Operating Temperature
-40 to +85
-55 to +125
-55 to +125
1.25
50
o
Value
-0.5 to +4.6
-0.5 to V
DD
+0.5
Unit
V
V
-0 to +70
o
C
.
T
BIAS
T
STG
P
T
I
OUT
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
C
C
o
W
mA
SOJ and TSOP
Top View
Truth Table
(1)
CS
L
L
L
H
OE
L
X
H
X
WE
H
L
H
X
I/O
DATA
OUT
DATA
IN
High-Z
High-Z
Read Data
Write Data
Output Disabled
Deselected – Standby
3873 tbl 01
3873 tbl 02
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliabilty.
Function
Recommended Operating Tempera-
ture and Supply Voltage
Grade
Commercial
Industrial
Temperature
0°C to +70°C
-40°C to +85°C
GND
0V
0V
V
DD
See Below
See Below
3873 tb l 02a
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't care.
Recommended DC Operating
Conditions
Symbol
V
DD
(1)
Parameter
Supply Voltage
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.15
3.0
0
2.0
–0.5
(1)
Typ.
3.3
3.3
0
____
____
Capacitance
(T
A
= +25°C, f = 1.0MHz, SOJ package)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
6
7
Unit
pF
pF
3873 tbl 03
Max.
3.6
3.6
0
V
DD
+0.3
(3)
0.8
Unit
V
V
V
V
V
3873 tbl 04
V
DD
(2)
V
SS
V
IH
V
IL
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
NOTES:
1. For 71V124SA10 only.
2. For all speed grades except 71V124SA10.
3. V
IH
(max.) = V
DD
+2V for pulse width less than 5ns, once per cycle.
4. V
IL
(min.) = –2V for pulse width less than 5ns, once per cycle.
(V
DD
= Min. to Max., Commercial and Industrial Temperature Ranges)
Test Conditions
V
DD
= Max., V
IN =
GND to V
DD
V
DD
= Max.,CS
=
V
IH
, V
OUT =
GND to V
DD
I
OL
= 8mA, V
DD
= Min.
I
OH
= –4mA, V
DD
= Min.
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3873 tbl 05
2.4
2