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IDT71V424S12PH 参数 Datasheet PDF下载

IDT71V424S12PH图片预览
型号: IDT71V424S12PH
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V CMOS静态RAM 4 MEG ( 512K ×8位) [3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)]
分类和应用:
文件页数/大小: 9 页 / 75 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT71V424S, IDT71V424L, 3.3V CMOS Static RAM
4 Meg (512K x 8-bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 1
(1)
t
RC
ADDRESS
t
AA
OE
t
OE
CS
t
OLZ
(5)
(5)
(3)
t
ACS
t
CLZ
DATA
OUT
t
CHZ (5)
t
OHZ (5)
HIGH IMPEDANCE
DATA
OUT
VALID
t
PD
V
CC
SUPPLY I
CC
CURRENT I
SB
t
PU
3622 drw 06
Timing Waveform of Read Cycle No. 2
(1, 2, 4)
t
RC
ADDRESS
t
AA
t
OH
DATA
OUT
PREVIOUS DATA
OUT
VALID
t
OH
DATA
OUT
VALID
3622 drw 07
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Device is continuously selected,
CS
is LOW.
3. Address must be valid prior to or coincident with the later of
CS
transition LOW; otherwise t
AA
is the limiting parameter.
4.
OE
is LOW.
5. Transition is measured ±200mV from steady state.
6.42
6