IDT71V016, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
V
TERM
(3)
T
A
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
–0.5 to +4.6
–0.5 to V
CC
+0.5
0 to +70
–55 to +125
–55 to +125
1.0
50
Unit
V
V
o
Recommended Operating
Temperature and Supply Voltage
Grade
Commercial
Industrial
Temperature
0°C to +70°C
–40°C to +85°C
GND
0V
0V
V
DD
3.3V ± 0.3V
3.3V ± 0.3V
3211 tbl 04
C
C
C
o
o
Recommended DC Operating
Conditions
Symbol
V
DD
Parameter
Supply Voltage
Supply Voltage
Input High Voltage – Inputs
Input High Voltage – I/O
Input Low Voltage
Min.
Typ.
3.3
0
—
____
____
Max.
3.6
0
4.6
V
DD
+0.3
0.8
Unit
V
V
V
V
V
3211 tbl 05
W
mA
3211 tbl 03
GND
V
IH
V
IH
V
IL
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
DD
terminals only.
3. Input, Output,and I/O terminals; 4.6V maximum.
DC Electrical Characteristics
(V
DD
= 3.3V ± 0.3V, Commercial and Industrial Temperature Ranges)
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
DC Electrical Characteristics
(V
DD
= 3.3V ± 0.3V, V
LC
= 0.2V, V
HC
= V
DD
–0.2V)
Symbol
I
CC
Parameter
O
N N
I
A
T CE
6S NS
R S
01 IG
A E
V S
P L
71 DE
O
ER W
S
D E
B
R N
2.0
–0.5
(1)
NOTE:
1. V
IL
(min.) = –1.5V for pulse width less than tRC/2, once per cycle.
C
E
3.0
0
2.0
Capacitance
Symbol
C
IN
(T
A
= +25°C, f = 1.0MHz, SOJ package)
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
Max.
6
7
Unit
pF
pF
C
I/O
V
OUT
= 3dV
3211 tbl 06
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
IDT71V016
Test Condition
Min.
___
___
___
Max.
5
5
Unit
µA
µA
V
V
3211 tbl 07
V
DD
= Max., V
IN
= GND to V
DD
V
DD
= Max.,
CS
= V
IH
, V
OUT
= GND to V
DD
O R
O
F
(1)
I
OL
= 8mA, V
DD
= Min.
0.4
___
I
OH
= –4mA, V
DD
= Min.
2.4
71V016S15
Com'l
130
Ind.
130
71V016S20
Com'l.
120
Ind.
120
Unit
mA
Dynam ic Operating Current
CS
≤
V
IL
, Outputs Open, V
DD
= Max., f = f
MAX
(2)
Standby Power Supply Current (TTL Level)
CS
≥
V
IH
, Outputs Open, V
DD
= Max., f = f
MAX
(2)
Standby Power Supply Current (CMOS Level)
CS
≥
V
HC
, Outputs Open, V
DD
= Max., f = 0
(2)
V
IN
≤
V
LC
or V
IN
≥
V
HC
I
SB
35
35
30
30
mA
I
SB1
5
7
5
7
mA
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing .
3211 tbl 08
6.42
3
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
