IDT71V124, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit), Revolutionary Pinout
Commercial and Industrial Temperature Ranges
Pin Configuration
A
0
A
1
A
2
A
3
CS
I/O
0
I/O
1
V
DD
GND
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
1
32
2
31
3
30
4
29
28
5
6 SO32-3 27
26
7
25
8
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
GND
V
DD
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
T
A
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage with
Respect to GND
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
–0.5 to +4.1
(2)
0 to +70
–55 to +125
–55 to +125
Unit
V
o
o
C
C
C
o
SOJ
Top View
Truth Table
(1,2)
CS
L
L
L
H
V
HC
(3)
OE
L
X
H
X
X
WE
H
L
H
X
X
I/O
DATA
OUT
DATA
IN
High-Z
NOTES:
1. H = V
IH
, L = V
IL
, x = Don't care.
2. V
LC
= 0.2V, V
HC
= V
DD
–0.2V.
3. Other inputs
≥V
HC
or
≤
V
LC
.
Capacitance
Symbol
C
IN
C
I/O
(T
A
= +25°C, f = 1.0MHz, SOJ package)
Parameter
(1)
Input Capacitance
I/O Capacitance
O
N N
I
A
T CE
4S NS
R S
12 IG
A E
V S
P L
71 DE
O
ER W
S
D E
B
R N
3484 drw 02
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliabilty.
2. V
TERM
must not exceed V
DD
+ 0.5V.
C
E
0.5
50
W
mA
3484 tbl 02
Function
Read Data
Write Data
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
0V
V
DD
See Below
See Below
3484 tb l 02a
Output Disabled
Commercial
Industrial
0°C to +70°C
High-Z
Deselected – Standby (I
SB
)
–40°C to +85°C
0V
High-Z
Deselected – Standby (I
SB1
)
3484 tbl 01
Recommended DC Operating
Conditions
Symbol
V
DD
Parameter
Min.
3.0
0
Typ.
3.3
0
Max.
3.6
0
Unit
V
V
V
V
3484 tbl 04
Conditions
V
IN
= 3dV
V
OUT
= 3dV
NOTE:
1. This parameter is guaranteed by device characterization, but is not production
tested.
O R
O
F
Max.
8
8
Unit
pF
Supply Voltage
Ground
GND
V
IH
V
IL
pF
Input High Voltage
Input Low Voltage
2.0
–0.3
(1)
____
____
V
DD
+0.3
0.8
3484 tbl 03
NOTE:
1. V
IL
(min.) = –1V for pulse width less than 5ns, once per cycle.
DC Electrical Characteristics
(V
DD
= 3.3V ± 10%, Commercial and Industrial Temperature Ranges)
IDT71V124
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
DD
= Max., V
IN
= GND to V
DD
V
DD
= Max.,
CS
= V
IH
, V
OUT
= GND to V
DD
I
OL
= 8mA, V
DD
= Min.
I
OH
= –8mA, V
DD
= Min.
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3484 tbl 05
2.4
6.42
2
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
