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IDT71V424L15Y 参数 Datasheet PDF下载

IDT71V424L15Y图片预览
型号: IDT71V424L15Y
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V CMOS静态RAM 4 MEG ( 512K ×8位) [3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)]
分类和应用:
文件页数/大小: 9 页 / 75 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT71V424S, IDT71V424L, 3.3V CMOS Static RAM  
4 Meg (512K x 8-bit)  
Commercial and Industrial Temperature Ranges  
Timing Waveform of Read Cycle No. 1(1)  
tRC  
ADDRESS  
t
AA  
OE  
tOE  
(5)  
tOLZ  
CS  
(3)  
tACS  
(5)  
(5)  
tOHZ  
tCLZ  
(5)  
CHZ  
t
HIGH IMPEDANCE  
DATAOUT  
DATAOUT VALID  
t
PD  
t
PU  
I
I
CC  
SB  
V
CC SUPPLY  
CURRENT  
3622 drw 06  
Timing Waveform of Read Cycle No. 2(1, 2, 4)  
t
RC  
ADDRESS  
DATAOUT  
tAA  
t
OH  
tOH  
PREVIOUS DATAOUT VALID  
DATAOUT VALID  
3622 drw 07  
NOTES:  
1. WE is HIGH for Read Cycle.  
2. Device is continuously selected, CS is LOW.  
3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter.  
4. OE is LOW.  
5. Transition is measured ±200mV from steady state.  
6.42  
6