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BF998 参数 Datasheet PDF下载

BF998图片预览
型号: BF998
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOSFET四极管 [Silicon N-Channel MOSFET Tetrode]
分类和应用:
文件页数/大小: 6 页 / 250 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BF998...
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA,
V
G1S
= -4 V,
V
G2S
= -4 V
Gate 1 source breakdown voltage
±I
G2S
= 10 mA,
V
G2S
=
V
DS
= 0
Gate2 source breakdown voltage
±I
G2S
= 10 mA,
V
G2S
=
V
DS
= 0
Gate 1 source leakage current
±V
G1S
= 5 V,
V
G2S
=
V
DS
= 0
Gate 2 source leakage current
±V
G2S
= 5 V,
V
G2S
=
V
DS
= 0
Drain current
V
DS
= 8 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Gate 1 source pinch-off voltage
V
DS
= 8 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate 2 source pinch-off voltage
V
DS
= 8 V,
V
G1S
= 0 ,
I
D
= 20 µA
-V
G2S(p)
-
0.8
2
-V
G1S(p)
-
0.8
2.5
V
I
DSS
5
9
15
mA
±I
G2SS
-
-
50
nA
±I
G1SS
-
-
50
nA
±V
(BR)G2SS
8
-
12
±V
(BR)G1SS
8
-
12
V
(BR)DS
12
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Feb-13-2004