BSC025N03LS G
9 Drain-source on-state resistance
R
DS(on)
=f(T
j
);
I
D
=30 A;
V
GS
=10 V
10 Typ. gate threshold voltage
V
GS(th)
=f(T
j
);
V
GS
=V
DS
;
I
D
=250 µA
4
2.5
2
3
98 %
R
DS(on)
[m
Ω
]
typ
2
V
GS(th)
[V]
100
140
180
1.5
1
1
0.5
0
-60
-20
20
60
0
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
C
=f(V
DS
);
V
GS
=0 V;
f
=1 MHz
12 Forward characteristics of reverse diode
I
F
=f(V
SD
)
parameter:
T
j
10
4
10000
1000
Ciss
25 °C
Coss
150 °C, 98%
10
3
1000
100
150 °C
25 °C, 98%
C
[pF]
10
2
100
Crss
I
F
[A]
10
10
1
10
1
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
0
V
DS
[V]
V
SD
[V]
Rev. 1.6
page 6
2009-10-22