BSP60-BSP62
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
17
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BSP60
I
C
= 10 mA,
I
B
= 0 , BSP61
I
C
= 10 mA,
I
B
= 0 , BCP62
V
(BR)CEO
Unit
max.
V
typ.
45
60
80
V
(BR)CBO
-
-
-
-
-
-
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BSP60
I
C
= 100 µA,
I
E
= 0 , BSP61
I
C
= 100 µA,
I
E
= 0 , BSP62
60
80
90
V
(BR)EBO
I
CES
I
EBO
h
FE
-
-
-
-
-
-
-
-
-
-
10
10
µA
µA
-
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
5
-
-
Collector-emitter cutoff current
V
CE
=
V
CE0max
,
V
BE
= 0
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain
2)
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
1000
2000
V
CEsat
-
-
-
-
-
-
-
-
V
1.3
1.8
1.9
2.2
Collector-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.55 mA
I
C
= 1 A,
I
B
= 1 mA
-
-
V
BEsat
Base emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
-
-
AC Characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
1
For
f
T
-
200
-
MHz
calculation of
R
thJA please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
Pulse
2
2007-04-26
INFINEON [ INFINEON TECHNOLOGIES AG ]
