Smart High-Side Power Switch
BTS5231-2GS
Block Description and Electrical Characteristics
4
4.1
Block Description and Electrical Characteristics
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Output On-State Resistance
The on-state resistance depends on the supply voltage as well as the junction
temperature
T
j
.
shows that dependencies for the typical on-state resistance
R
DS(ON)
. The on-state resistance in reverse polarity mode is described in
V
bb
= 13.5 V
240
220
200
180
160
140
120
100
80
60
-50 -25
240
220
R
DS(ON)
/mΩ
200
180
160
140
120
100
0
25
50
T /°C
75 100 125 150
0
5
10
15
V
bb
/V
20
25
T
j
= 25
°C
Figure 4
R
DS(ON)
/mΩ
Typical On-State Resistance
4.1.2
Input Circuit
shows the input circuit of the BTS5231-2GS. There is an integrated input
resistor that makes external components obsolet. The current source to ground ensures
that the device switches off in case of open input pin. The zener diode protects the input
circuit against ESD pulses.
IN
R
IN
I
IN
R
GND
GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
10
V1.2, 2008-09-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
