BTS 640 S2
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
typ
-- 1.47
Unit
min
--
max
Thermal resistance
K/W
junction - ambient (free air): RthJA
SMD version, device on PCB4):
--
--
--
33
75
--
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 6&7)
I = 5 A
T=25 °C: RON
T=150 °C:
j
--
--
27
54
30
60
mΩ
L
j
Output voltage drop limitation at small load
currents (pin 4 to 6&7), see page 14
I = 0.5 A
L
VON(NL)
50
--
--
mV
A
T =-40...+150°C:
j
Nominal load current, ISO Norm (pin 4 to 6&7)
V
= 0.5 V, T = 85 °C
IL(ISO)
11.4 12.6
ON
C
Nominal load current, device on PCB4)
T = 85 °C, T ≤ 150 °C V
ON
≤ 0.5 V,
IL(NOM)
4.0
--
4.5
--
--
8
A
A
j
Output current (pin 6&7) while GND disconnected
IL(GNDhigh)
mA
or GND pulled up, V =30 V, V = 0, see diagram page
bb
IN
9; not subject to production test, specified by design
Turn-on time
Turn-off time
IN
IN
to 90% V
to 10% V
: ton
: toff
25
25
70
80
150
200
µs
OUT
OUT
R = 12 Ω, T =-40...+150°C
L
j
Slew rate on
dV /dton
-dV/dtoff
0.1
0.1
--
--
1 V/µs
1 V/µs
10 to 30% V
OUT
, R = 12 Ω, T =-40...+150°C
L j
Slew rate off
70 to 40% V
OUT
, R = 12 Ω, T =-40...+150°C
L j
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air.
4)
bb
Semiconductor Group
Page 3
2003-Oct-01
INFINEON [ Infineon ]
