BTS 726 L1
Electrical Characteristics
Parameter and Conditions,
each of the two channels
at T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
T
j
= 25°C:
R
ON
I
L
= 2 A
each channel,
T
j
= 150°C:
two parallel channels,
T
j
= 25°C:
Nominal load current
one channel active:
two parallel channels active:
Device on PCB
5)
,
T
a
=
85°C,
T
j
≤
150°C
Output current while GND disconnected or pulled
up; V
bb
= 30 V,
V
IN
= 0, see diagram page 9
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
T
j
=-40...+150°C:
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
Slew rate off
T
j
=-40...+150°C:
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
Operating Parameters
Operating voltage
7
)
Undervoltage shutdown
Undervoltage restart
--
50
100
25
4.0
6.0
--
200
230
--
--
60
120
30
--
mΩ
I
L(NOM)
3.6
5.5
--
80
80
0.1
0.1
A
I
L(GNDhigh)
t
on
t
off
dV/dt
on
-dV/dt
off
10
400
450
1
1
mA
µs
V/µs
V/µs
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+25°C:
T
j
=+150°C:
Undervoltage restart of charge pump
T
j
=-40...+150°C:
see diagram page 14
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
T
j
=-40...+150°C:
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
8
)
I
bb
= 40 mA
T
j
=25°C
:
Standby current, all channels off
T
j
=150°C:
V
IN
= 0
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
5.0
3.5
--
--
--
34
33
--
42
--
--
--
--
--
5.6
0.2
--
--
0.5
47
20
29
34
5.0
5.0
7.0
7.0
--
43
--
--
--
50
56
V
V
V
V
V
V
V
V
V
µA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
V
bb(AZ)
I
bb(off)
7)
8)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈
V
bb
- 2 V
see also
V
ON(CL)
in circuit diagram on page 8.
Semiconductor Group
4
INFINEON [ INFINEON TECHNOLOGIES AG ]
